ECG055B-G ingap hbt gain block datasheet: rev b 12/07/14 - 1 of 7 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com product features ? dc ? ? ? 6 ? ghz ? +18 ? dbm p1db at 1 ? ghz ? +34 ? dbm oip3 at 1 ? ghz ? 20.5 ? db gain at 1 ? ghz ? 3.4 ? db noise figure ? available in lead-free ? / ? sot-89 package style ? internally matched to 50 ? general description the ECG055B-G is a general-purpose buffer amplifie r that offers high dynamic range in a low-cost surface- mount package. at 1000 ? mhz, the ECG055B-G typically provides 20.5 ? db of gain, +34 ? dbm output ip3, and +18 ? dbm p1db. the ECG055B-G consists of darlington pair amplifiers using the high reliability ingap ? / ? gaas hbt process technology and only requires dc-blocking capacitors, a bias resistor, and an inductive rf choke for operation. the device is ideal for wireless applications and is available in low-cost, surface-mountable plastic lead-free ? / ? rohs-compliant sot-89 packages. a sot-86 version is also available as the ecg055c. all devices are 100% rf and dc tested. the broadband mmic amplifier can be directly applied to various current and next generation wireless technologies such as gprs, gsm, cdma, and w- cdma. in addition, the ec g055b-g will work for othe r various applications within the dc to 6 ? ghz frequency range such as catv and mobile wireless. applications ? wireless in frastructure ? catv / satv / moca ? point to point ? defense & aerospace ? test & measurement equipment ? general purpose wireless functional block diagram pin configuration pin no. label 1 rf in 2 gnd 3 rf out ? / ? v cc backside paddle gnd orderin g information part no. description ECG055B-G ingap hbt gain block standard t/r size = 1000 pieces on a 7? reel sot-89 package style
ECG055B-G ingap hbt gain block datasheet: rev b 12/07/14 - 2 of 7 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com recommended operating conditions parameter min typ max units t case ? 40 +85 c junction temperature +160 c electrical specifications ar e measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. absolute maximum ratings parameter rating storage temperature ? 65 to 150 ? c rf input power (continuous) +12 ? dbm device current 150 ? ma operation of this device out side the parameter ranges given above may cause permanent damage. electrical specifications test conditions unless otherwise noted: v supply = +6 ? v, r bias = 18 ? , temp.=+25 ? c, 50 ? system parameter conditions min typ max units operational bandwidth dc 6000 mhz gain freq.=1000 mhz pout=+4 dbm ? / ? tone, f ? = ? 1 ? mhz 20.5 db output p1db +18 dbm output ip3 +34 dbm gain freq.=2000 mhz pout=+4 dbm ? / ? tone, f ? = ? 1 ? mhz 19.3 20.1 21 db input return loss 20 db output return loss 12.5 db output p1db +18 dbm output ip3 +30 +32 dbm noise figure 3.4 4 db device voltage +4.2 +4.8 +5.3 v device current 65 ma thermal resistance 128 ? c ? / ? w typical device rf performance ? (1) test conditions unless otherwise noted: v supply = +6 ? v, i cc = 65 ma (typ.), r bias = 18 ? , temp.=+25 ? c, 50 ? system parameter typical units frequency 100 500 900 1900 2140 2400 3500 5800 mhz gain 20.7 20.6 20.5 20.1 20.1 19.9 19.3 17.2 db input return loss 36 31 26.3 19.7 18.5 17.5 14 8.9 db output return loss 27 23 19.1 12.9 12.2 11 8.1 4.1 db output p1db +18.2 +18 +18.1 +18.2 +17.8 +17.8 +17.2 dbm output ip3 (2) +33 +33.5 +34.5 +33.5 +32.9 +32 dbm noise figure 3.4 3.6 3.4 3.4 3.4 3.8 db notes: 1. gain and return loss values presented above, and in the plot s of the following section, are measured at the device level. application specific performance values will differ in accordan ce with external components selected for the desired frequency band of operation. p1db, oip3 and nf data is measured using the application circuit shown on page 4. 2. pout= +4 dbm ? / ? tone, 1 ? mhz tone spacing.
ECG055B-G ingap hbt gain block datasheet: rev b 12/07/14 - 3 of 7 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical device rf performance ? test conditions unless otherwise noted: v suppl y = +6 ? ? , tem p .=+25 ? ? s y stem 10 12 14 16 18 20 22 0 1000 2000 3000 4000 5000 6000 |s21| (db) frequency (mhz) gain vs. frequency temp.=+25c -25 -20 -15 -10 -5 0 0 1000 2000 3000 4000 5000 6000 |s11|, |s22| (db) frequency (mhz) return loss vs. frequency |s22| |s11| temp.=+25c icc vs. vde 0 40 80 120 160 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 vde (v) icc (ma) 25c 20 25 30 35 40 1234 oip3 (dbm) frequency (mhz) oip3 vs. frequency +85c +25c ? 40c 14 16 18 20 1234 p1db (dbm) frequency (mhz) p1db vs. frequency +85c +25c ? 40c 2.0 2.5 3.0 3.5 4.0 4.5 5.0 800 1000 1200 1400 1600 1800 2000 nf (db) frequency (mhz) noise figure vs. frequency temp.=+25c notes: 1. data is shown as device performance only. actual implem entation for the desired frequency band will be determined by external components shown in the application circuit. typical device s-parameters test conditions: v device = +4.8 ? v, i cc = 65 ma, temp. = 25 ? c, calibrated to device leads freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 ? 35.44 ? 155.39 20.70 178.22 ? 22.72 0.33 ? 27.17 ? 13.13 500 ? 31.06 ? 130.40 20.64 160.99 ? 22.79 ? 4.72 ? 23.11 ? 72.28 1000 ? 25.99 ? 134.19 20.51 142.21 ? 22.57 ? 10.86 ? 18.21 ? 103.46 1500 ? 21.96 ? 143.12 20.33 123.40 ? 22.41 ? 17.52 ? 14.71 ? 126.14 2000 ? 19.74 ? 147.93 20.14 104.91 ? 22.25 ? 24.67 ? 12.69 ? 147.96 2500 ? 17.50 ? 165.99 19.92 86.66 ? 21.53 ? 31.23 ? 10.92 ? 167.56 3000 ? 15.68 177.82 19.65 68.34 ? 21.19 ? 38.23 ? 9.29 174.99 3500 ? 14.02 162.84 19.32 49.37 ? 20.96 ? 46.84 ? 8.13 153.30 4000 ? 12.75 145.85 18.96 30.89 ? 20.43 ? 55.87 ? 7.17 137.75 4500 ? 11.62 126.85 18.62 11.81 ? 20.02 ? 64.61 ? 5.98 117.77 5000 ? 10.22 104.39 17.97 ? 7.65 ? 19.54 ? 74.66 ? 5.08 96.84 5500 ? 9.77 89.88 17.42 ? 25.15 ? 19.65 ? 86.77 ? 4.74 83.19 6000 ? 8.35 70.44 16.85 ? 45.49 ? 19.44 ? 101.04 ? 3.88 62.30 notes: 1. device s-parameters are available for downl oad off of the website at: www.triquint.com
ECG055B-G ingap hbt gain block datasheet: rev b 12/07/14 - 4 of 7 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com recommended application circuit notes: 1. see evaluation board pcb information section for material and stack-up. bill of material reference des. value description l1 39 nh wirewound inductor, 0603 c1, c2 56 pf chip capacitor, 0603 c3 0.018 ? f chip capacitor, 0603 c4 do not place r4 18 ? 1% tolerance, 0805 recommended component values frequency (mhz) 50 500 900 1900 2200 2500 3500 l1 820 ? nh 220 ? nh 68 ? nh 27 ? nh 22 ? nh 18 ? nh 15 ? nh c1, c2, c3 .018 ? f 1000 ? pf 100 ? pf 68 ? pf 68 ? pf 56 ? pf 39 ? pf recommended bias resistor values v supply (v) 6 7 8 9 10 12 r4 ( ) 18.5 33.8 49 65 80 111 component size 0805 1210 1210 2010 2010 2512 notes: 1. the proper value for r4 is dependent upon the supply volta ge and allows for bias stability over temperature. triquint recommends a minimum supply bias of +6 v. a 1% tolerance resistor is recommended. c1 blocking capacitor rf out l1 rf choke c3 0.018 f r4 bias resisto r rf in c4 bypass capacito r c2 blocking capacitor vcc icc = 65 ma ecg055
ECG055B-G ingap hbt gain block datasheet: rev b 12/07/14 - 5 of 7 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board pcb information triquint pcb 1069124 material and stack-up 1 oz. cu bottom layer nelco n-4000-13 core nelco n-4000-13 1 oz. cu top layer 1 oz. cu inner layer 1 oz. cu inner layer 0.062" 0.006" finished board thickness 0.014" 0.014" 50 ohm line dimensions: width=0.028" spacing=0.036" pin configuration and description rf in gnd rf out / v cc 1 2 3 backside paddle - gnd pin no. label description 1 rf in rf input, matched to 50 ohms. external dc block is required. 3 rf out ? / ? v cc rf output / dc supply, matched to 50 ohms. external dc block, bias choke, and dropping resistor is required. 2, backside paddle gnd paddle rf/dc ground. use recommended via pattern to minimize inductance and thermal resistance. see pcb mounting pattern for suggested footprint.
ECG055B-G ingap hbt gain block datasheet: rev b 12/07/14 - 6 of 7 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com package marking and dimensions marking: part number ?e055g lot code ? xxxx notes: 1. all dimensions are in millim eters. angles are in degrees. 2. dimension and tolerance formats conform to asme y14.4m-1994. 3. the terminal #1 identifier and terminal numbering conform to jesd 95-1 spp-012. 4. contact plating: nipdau pcb mounting pattern notes: 1. all dimensions are in millimeters. angles are in degrees. 2. use 1 oz. copper minimum for top and bottom layer metal. 3. vias are required under the backside paddle of this device for pr oper rf/dc groundi ng and thermal diss ipation. 4. do not remove or minimize via hole structure in the pcb. thermal and rf grounding is critical. 5. we recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25 mm (0.10?). 6. ensure good package backside paddle solder attach for reliable operation and best electrical performance. 1.62 (.064) 4.40 (.173) .35 (.014) .36 (.014) .44 (.017) 1.40 (.055) d1 d c b1 b symbol a 4.60 (.181) 4.50 (.177) 1.83 (.072) 1.73 (.068) 1.60 (.063) max .44 (.017) .48 (.019) .56 (.022) .50 (.020) .40 (.016) .42 (.0165) 1.50 (.059) typ min 3.94 (.155) 2.13 (.084) 2.29 (.090) e h l e1 e1 e symbol 2.29 (.090) 2.60 (.102) 4.25 (.167) 1.20 (.047) 1.50 bsc (.059) 1.10 (.043) 4.10 (.161) 3.00 bsc (.118) 2.20 (.087) 2.50 (.098) max min .89 (.035) typ 7 b e e1 2x b1 e l h d1 d c e1 d1 d1 alternate backside patterns - reflow compatible (part may be supplied with either pattern) a half etching depth 0.001" e055g xxxx
ECG055B-G ingap hbt gain block datasheet: rev b 12/07/14 - 7 of 7 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd-sensitive device esd rating: class 1a value: ? 250 v to < ? 500 ? v test: human body model (hbm) standard: esda/jedec standard js-001-2012 solderability compatible with both lead-free (260 ? c maximum reflow temperature) and tin/lead (245 ? c maximum reflow temperature) soldering processes. contact plating: nipdau rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating msl rating: level 3 test: 260 ? c convection reflow standard: jedec standard ipc/jedec j-std-020 contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1.503.615.9000 email: info-sales@triquint.com fax: +1.503.615.8902 for technical questions and application information: email: sjcapplications.engineering@triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or li ability whatsoever for any of the information contained herein. triquint assume s no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is " and with all faults, and the entire risk associated with such information is entirely with the user. a ll information contained herein is subject to change without notice. customers should obtain and verify the latest relevant info rmation before placing orders fo r triquint products. the information contained herein or any use of such information does not grant, exp licitly or implicitly, to any party any patent rights, licenses, or any other inte llectual property rights, whether with r egard to such information itself o r anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life- sustaining applications, or other applications where a fa ilure would reasonably be expected to cause severe personal injury or death.
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